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此器件专门针对手机和其他超便携应用中的电池充电或负载开关而设计。它具有一个带有低导通电阻的 MOSFET。MicroFET 2X2 封装对于其物理尺寸来说提供了卓越的热性能,非常适合线性模式应用。
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CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
Vgs (V)
Vgs(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
FDMA507PZ
Active
Pb
A
H
P
WDFN-6
1
260
REEL
3000
Y
P-Channel
PowerTrench® T1
Power 22
Low-Medium Voltage
Logic
0
Single
0
-20
-
8
-1.5
-7.8
2.4
35
25
14
30
1515
-
-
-
-
$0.1854
More Details
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可靠性数据
Die Related Summary Data
Device: FDMA507PZ
Equivalent to wafer fab process: TV
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
TV
0
1399545734
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)