MOSFETs | FDMA530PZ

P 沟道，PowerTrench® MOSFET，-30V，-6.8A，35mΩ

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概览

此器件专门针对手机和其他超便携应用中的电池充电或负载开关而设计。它具有一个带有低导通电阻的 MOSFET。MicroFET 2x2 封装对于其物理尺寸来说提供了卓越的热性能，非常适合线性模式应用。

  • This product is general usage and suitable for many different applications.
  • 最大 RDS(on) = 35 mΩ（VGS = -10 V、ID = -6.8 A 时）
  • 最大 RDS(on) = 65 mΩ（VGS = -4.5 V、ID = -5.0 A 时）
  • 薄型 - 最大 0.8 mm - 采用新的 MicroFET 2X2 mm 封装
  • HBM ESD 保护电平>3 kV 典型值（注 3）
  • 无卤素化合物和锑氧化物
  • 符合 RoHS 标准

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMA530PZ

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Active

CAD Model

Pb

A

H

P

WDFN-6

511CZ

1

260

REEL

3000

Y

-30

35

P-Channel

Single

25

-3

-6.8

2.4

-

65

24

9

805

$0.2972

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