单 N 沟道,PowerTrench® MOSFET,150V,2.4A,175mΩ

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概览

此器件用于为同步降压转换器提供最高效率和热性能。低 rDS(on) 和门极电荷提供了卓越的开关性能。

  • This product is general usage and suitable for many different applications.

  • 最大值 rDS(on) = 9.9 mΩ(VGS = 10 V, ID = 10.4 A 时)
  • 最大值 rDS(on) = 237 mΩ(VGS = 6 V, ID = 2.0 A 时)
  • 薄型 – 最大 0.8mm,采用新型 MicroFET 2x2 mm 封装
  • 无卤素化合物和锑氧化物
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMA86251

Active

CAD Model

Pb

A

H

P

WDFN-6

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 22

Low-Medium Voltage

Standard

0

Single

0

150

175

±20

4

2.4

2.4

-

-

-

3.4

259

1

38

24

1.5

$0.3218

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