MOSFETs | FDMA910PZ

P 沟道，PowerTrench® MOSFET，-20V，-9.4A，20mΩ

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概览

此器件专门针对手机和其他超便携应用中的电池充电或负载开关而设计。它具有一个带有低导通电阻的 MOSFET，且可针对 ESD 提供齐纳二极管保护。MicroFET 2x2 封装对于其物理尺寸来说提供了卓越的热性能，非常适合线性模式应用。

  • 手机
  • 便携导航
  • VGS = -4.5 V，ID = -9.4 A时，最大rDS(on) = 20mΩ
  • VGS = -2.5 V，ID = -8.6 A时，最大rDS(on) = 24mΩ
  • VGS = -1.8 V，ID = -7.2 A时，最大rDS(on) = 34mΩ
  • 薄型 – 最大0.8mm – 采用新的MicroFET 2x2 mm封装
  • HBM ESD 保护电平> 2.8 kV 典型值（注 3）
  • 不含有卤化合物和氧化锑
  • 符合 RoHS 标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMA910PZ

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Active

CAD Model

Pb

A

H

P

WDFN-6

511CZ

1

260

REEL

3000

Y

-20

-

P-Channel

Single

8

-1.5

-9.4

2.4

24

20

5.2

21

2110

$0.3245

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