N 沟道,屏蔽门极,PowerTrench® MOSFET,80V,64A,6.8mΩ

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此 N 沟道 MV MOSFET 使用先进的 PowerTrench®工艺生产,该工艺结合了屏蔽门极技术。此工艺经过了优化,可最大程度降低导通电阻,同时可保持业内最佳的软体二极管。

  • Primary DC−DC MOSFET
  • Synchronous Rectifier in DC−DC and AC−DC
  • Motor Drive
  • Solar
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 6.8 mΩ at VGS = 10 V, ID = 21 A
  • Max rDS(on) = 11.1 mΩ at VGS = 4.5 V, ID = 17 A
  • 5 V Drive Capable
  • 50% lower Qrr than other MOSFET suppliers
  • Lowers switching noise/EMI
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant
  • Dualcool capable package

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMC007N08LCDC

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Active

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

80

6.8

N-Channel

Single

±20

2.5

64

3

-

11.1

15

31

2195

$1.3239

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