FDMC007N30D

双 N 沟道，PowerTrench® MOSFET，30V

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CAD模型

概览

此器件在一个双 Power33 (3 mm X 3 mm MLP) 封装中包括了两个特制的 N 沟道 MOSFET。开关节点已经内部联接，可实现同步降压转换器的轻松布置和布线。控制 MOSFET (Q1) 和同步 MOSFET (Q2) 可提供最佳功率能效。

应用

This product is general usage and suitable for many different applications.

特性

Q1: N-Channel
MAX r_DS(on) = 11.6 mΩ at V_GS = 10 V, I_D = 10 A
Max r_DS(on) = 13.3 mΩ at V_GS = 4.5V, I_D = 9 A
Q2: N-Channel
MAX r_DS(on) = 6.4 mΩ at V_GS = 10V, I_D = 16 A
Max r_DS(on) = 7.0 mΩ at V_GS = 4.5V, I_D = 15 A
RoHS Compliant

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDMC007N30D

Active

WDFN-8

511DE

260

REEL

3000

N-Channel

Dual

Q1: 10.0, Q2: 16.0

Q1: 1.9 , Q2: 2.5

1685

$0.3212

产品型号:

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MOSFETs | FDMC007N30D

双 N 沟道，PowerTrench® MOSFET，30V

概览

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