MOSFETs | FDMC610P

P 沟道 PowerTrench® MOSFET -12V，-80A，3.9mΩ

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概览

此 P 沟道 MOSFET 专为提高 DC/DC 转换器的总体效能以及最大程度降低其开关节点噪声而设计，可以使用同步开关 PWM 控制器，也可以使用传统开关 PWM 控制器。它经过了优化，可实现低门极电荷、低 rDS(on)、快速开关和体二极管反向恢复性能。

  • This product is general usage and suitable for many different applications.
  • 最大值 rDS(on) = 3.9 mΩ（VGS = -4.5 V, ID = -22 A）
  • 最大值 rDS(on) = 6.4 mΩ（VGS = -2.5 V, ID = -16 A）
  • 一流的开关性能
  • 更低的输出电容、栅极电阻和栅极电荷升压效率
  • 屏蔽栅极技术降低了开关节点振铃，提高了抗EMI和交叉导通的能力
  • 符合 RoHS 标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMC610P

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Active

CAD Model

Pb

A

H

P

PQFN-8

483AK

1

260

REEL

3000

N

-12

-

P-Channel

Single

8

-1

-80

48

6.4

3.9

22

71

890

$0.8416

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