P 沟道,Power Trench® MOSFET,-30V,-20A,10mΩ

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概览

FDMC6679AZ 适用于最大程度降低负载开关应用中的损耗。同时结合了硅和封装技术的发展,可提供最低的 rDS(on) 以及 ESD 防护。

  • This product is general usage and suitable for many different applications.

  • VGS = -10 V,ID = -11.5 A时,最大rDS(on)
    = 10 mΩ
  • VGS = -4.5 V,ID = -8.5 A时,最大rDS(on) = 18mΩ
  • HBM ESD保护等级典型值为8kV(注3)
  • 为电池应用提供了扩展的VGSS电压范围(-25 V)
  • 高性能沟道技术可实现极低的rDS(on)
  • 高功率和高电流处理能力
  • 终端无引线且符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC6679AZ

Active, Not Rec

CAD Model

Pb

A

H

P

WDFN-8

1

260

REEL

3000

Y

P-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Single

0

-30

10

25

-3

-20

41

-

18

44

37

2985

-

-

-

-

$0.4713

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