Low/Medium Voltage MOSFETs | FDMC6679AZ

P 沟道，Power Trench® MOSFET，-30V，-20A，10mΩ

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FDMC6679AZ 适用于最大程度降低负载开关应用中的损耗。同时结合了硅和封装技术的发展，可提供最低的 rDS(on) 以及 ESD 防护。

  • This product is general usage and suitable for many different applications.

  • VGS = -10 V，ID = -11.5 A时，最大rDS(on)
    = 10 mΩ
  • VGS = -4.5 V，ID = -8.5 A时，最大rDS(on) = 18mΩ
  • HBM ESD保护等级典型值为8kV（注3）
  • 为电池应用提供了扩展的VGSS电压范围(-25 V)
  • 高性能沟道技术可实现极低的rDS(on)
  • 高功率和高电流处理能力
  • 终端无引线且符合RoHS标准

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC6679AZ

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可靠性数据

Die Related Summary Data

Device: FDMC6679AZ

Equivalent to wafer fab process: TV

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TV

0

1399545734

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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