双 N 沟道 PowerTrench® MOSFET 30V,12mΩ 和 23.5mΩ

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概览

此器件采用双 Power 33 (3 mm X 3 mm MLP) 封装,包括两个特制的 N 沟道 MOSFET。开关节点已经内部连接,可实现同步降压转换器的轻松布置和布线。控制 MOSFET (Q1) 和同步 MOSFET (Q2) 可提供最佳功率效率。

  • 笔记本电脑

  • Q1: N 沟道
  • 最大值 rDS(on) = 38 mΩ(VGS = 4.5 V, ID = 5 A
    时)Q2: N 沟道
  • 符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Active

CAD Model

Pb

A

H

P

WDFN-8

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Dual

0

30

12

20

3

Q1: 6.0, Q2: 8.0

Q1: 1.9 , Q2: 2.2

-

Q1: 38, Q2: 18

14

7

1180

-

-

-

-

$0.2353

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