Low/Medium Voltage MOSFETs | FDMC7200

双 N 沟道 PowerTrench® MOSFET 30V，12mΩ 和 23.5mΩ

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概览

此器件采用双 Power 33 (3 mm X 3 mm MLP) 封装，包括两个特制的 N 沟道 MOSFET。开关节点已经内部连接，可实现同步降压转换器的轻松布置和布线。控制 MOSFET (Q1) 和同步 MOSFET (Q2) 可提供最佳功率效率。

  • 笔记本电脑

  • Q1： N 沟道
  • 最大值 rDS(on) = 38 mΩ（VGS = 4.5 V, ID = 5 A
    时）Q2： N 沟道
  • 符合RoHS标准

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC7200

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CAD Model

Pb

A

H

P

WDFN-8

511DE

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Dual

0

30

12

20

3

Q1: 6.0, Q2: 8.0

Q1: 1.9 , Q2: 2.2

-

Q1: 38, Q2: 18

14

7

1180

-

-

-

-

$0.2353

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可靠性数据

Die Related Summary Data

Device: FDMC7200

Equivalent to wafer fab process: RM

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

RM

0

1284986536

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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