FDMC7672

30V N沟道PowerTrench® MOSFET

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概览

此N沟道MOSFET采用飞兆半导体先进的Power Trench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻而定制的。该器件非常适用于笔记本电脑和便携式电池组中的电源管理和负载开关应用。

应用

This product is general usage and suitable for many different applications.

特性

V_GS = 10 V，I_D = 16.9 A时，最大r_DS(on) = 5.7 mΩ
V_GS = 4.5 V，I_D = 15.0 A时，最大r_DS(on) = 7.0 mΩ
通态电阻r_DS(on)极低的高性能技术
终端是符合RoHS标准的无铅产品

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDMC7672

Active

WDFN-8

511DH

260

REEL

3000

N-Channel

Single

16.9

2925

$0.3623

产品型号:

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MOSFETs | FDMC7672

30V N沟道PowerTrench® MOSFET

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