FDMC8010DC

N 沟道 Dual CoolTM 33 PowerTrench® MOSFET 30V，157A，1.28mΩ

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CAD模型

概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的。同时结合了硅和 Dual Cool™ 封装技术的发展，可提供最低的 rDS(on)，同时利用极低的结到环境热阻保持出色的开关性能。

应用

This product is general usage and suitable for many different applications.

特性

Dual Cool™ Top Side Cooling PQFN package
Max r_DS(on) = 1.28 mΩ at V_GS = 10 V, I_D = 37 A
Max r_DS(on) = 1.74 mΩ at V_GS = 4.5 V, I_D = 32 A
High Performance Technology for Extremely Low r_DS(on)
RoHS Compliant

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDMC8010DC

Active

PQFN-8

483AY

260

REEL

3000

1.28

N-Channel

Single

157

1.74

4720

$0.4987

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MOSFETs | FDMC8010DC

N 沟道 Dual CoolTM 33 PowerTrench® MOSFET 30V，157A，1.28mΩ

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