MOSFETs | FDMC8015L

N 沟道，Power Trench® MOSFET，40V，18A，26mΩ

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CAD Model

CAD模型

概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的，特别适用于最大程度降低导通电阻，同时保持卓越的开关性能。

  • 消费电子
  • VGS = 10 V且ID = 7 A时，最大rDS(on) = 26 mΩ
  • VGS = 4.5 V且ID = 6A时，最大rDS(on) = 36 mΩ
  • 薄型 - 最大1 mm，采用Power 33封装
  • 100%经过UIL测试
  • 符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMC8015L

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Active

CAD Model

Pb

A

H

P

WDFN-8

511DR

1

260

REEL

3000

Y

40

26

N-Channel

Single

±20

3

18

24

-

36

-

6.6

710

$0.3532

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