双 N 和 P 沟道 PowerTrench® MOSFET 150V

Active

概览

这些双 N 和 P 沟道增强型功率 MOSFET 是使用先进的 PowerTrench® 工艺生产的,特别适用于最大程度降低导通电阻,同时保持出色的开关性能。缩小实现有源箝位拓扑所需的空间; 实现同类最佳的功率密度。

  • This product is general usage and suitable for many different applications.

  • Q1: N 沟道
  • 最大值 rDS(on) = 212 mΩ(VGS = 6 V, ID = 2 A
    )Q2: P 沟道
  • 经过优化,可用于有源箝位正向转换器
  • 符合 RoHS 标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC8097AC

Active

CAD Model

Pb

A

H

P

WDFN-8

1

260

REEL

3000

Y

Complementary

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Standard

0

Dual

0

150

155

20

4

2.4

1.9

~NA~

~NA~

7.2

1.2

162

1

43

13

1.4

$1.7547

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