Low/Medium Voltage MOSFETs | FDMC8321L

N 沟道 Power Trench® MOSFET 40V，49A，2.5mΩ

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概览

此 N 沟道 MOSFET 专为提高 DC/DC 转换器的总体效能以及最大程度降低其开关节点噪声而设计，可以使用同步开关 PWM 控制器，也可以使用传统开关 PWM 控制器。它经过了优化，可实现低门极电荷、低 RDS(on)、快速开关和体二极管反向恢复功能。

  • DC-DC商用电源

  • Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 22 A
  • Max rDS(on) = 4.1 mΩ at VGS = 4.5 V, ID = 18 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • Next Generation enhanced body diode technology, engineered for soft recovery
  • 100% UIL tested
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC8321L

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CAD Model

Pb

A

H

P

PQFN-8

483AK

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Single

0

40

2.5

±20

3

49

40

-

4.1

-

21

2930

5.8

20

1000

60

$0.462

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可靠性数据

Die Related Summary Data

Device: FDMC8321L

Equivalent to wafer fab process: RN

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

RN

9

5181260142

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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