Low/Medium Voltage MOSFETs | FDMC8321LDC

N 沟道，Power Trench® MOSFET，40V，108A，2.5mΩ

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概览

此 N 沟道 MOSFET 使用先进的 PowerTrench® 工艺生产。同时结合了硅和 Dual Cool™ 封装技术的发展，可提供最低的 rDS(on)，因为具有极低的结到环境热阻，同时可保持卓越的开关性能。

  • This product is general usage and suitable for many different applications.

  • Dual CoolTM 顶侧冷却PQFN封装
  • 最大值 rDS(on) = 2.5 mΩ（VGS = 10 V, ID = 27 A
    时）
  • 最大值 rDS(on) = 4.1 mΩ（VGS = 4.5 V, ID = 21 A
    时）
  • 高性能技术可实现极低的 rDS(on)
  • 符合 RoHS 标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC8321LDC

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0

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40

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108

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可靠性数据

Die Related Summary Data

Device: FDMC8321LDC

Equivalent to wafer fab process: U5

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

U5

0

54180784

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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