Low/Medium Voltage MOSFETs | FDMC8360LET40

N 沟道屏蔽门极 Power Trench® MOSFET 40V，141A，2.1mΩ

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概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的，该工艺结合了屏蔽门极技术。此工艺经过了优化，可最大程度降低导通电阻，同时可保持出色的开关性能。

  • This product is general usage and suitable for many different applications.

  • 屏蔽栅极 MOSFET 技术
  • 最大值 rDS(on) = 2.1 mΩ (VGS = 10 V, ID = 27 A
    )
  • 最大值 rDS(on) = 3.1 mΩ (VGS = 4.5 V, ID = 22 A
    )
  • 高性能技术，可实现极低 rDS(on)
  • 终端为无铅产品
  • 100% 经过 UIL 测试
  • 符合 RoHS 标准

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC8360LET40

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CAD Model

Pb

A

H

P

PQFN-8

483AW

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Single

0

40

2.1

±20

3

141

75

-

3.1

24

27

3785

8.1

30

1220

57

$0.5546

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可靠性数据

Die Related Summary Data

Device: FDMC8360LET40

Equivalent to wafer fab process: RN

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

RN

9

5181260142

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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