Low/Medium Voltage MOSFETs | FDMC8588

N 沟道，PowerTrench® MOSFET，25V，40A，5.7mΩ

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概览

此 N 沟道 MOSFET 专为提高 DC/DC 转换器的总能效以及最大程度降低其开关节点噪声而设计，可以使用同步开关 PWM 控制器，也可以使用传统开关 PWM 控制器。它经过了优化，可实现低门极电荷、低 RDS(ON)、快速开关和体二极管逆向恢复功能。

  • 台式计算机
  • 消费型设备
  • 笔记本电脑
  • 配电
  • EMS

  • 在VGS = 4.5 V且ID = 17 A时，最大值RDS(on) = 6.0 mΩ
  • 一流的开关性能
  • 更低的输出电容、栅极电阻和栅极电荷升压效率
  • 屏蔽栅极技术降低了开关节点振铃，提高了抗EMI和交叉导通的能力
  • 符合RoHS标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC8588

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CAD Model

Pb

A

H

P

PQFN-8

483AK

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Single

0

25

5

12

1.8

40

26

-

5.7

3

12

1228

-

-

-

-

$0.342

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可靠性数据

Die Related Summary Data

Device: FDMC8588

Equivalent to wafer fab process: U5

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

U5

0

54180784

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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