Low/Medium Voltage MOSFETs | FDMC86012

N 沟道，Power Trench® MOSFET，30V，88A，2.7mΩ

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概览

此器件专用于提高 DC-DC 转换器的能效。在 MOSFET 结构中使用新型技术，门极电荷和电容的各个组件得以优化，可降低开关损耗。低门极电阻和极低米勒电荷可在自适应和固定死区时间门极驱动电路中实现卓越性能。保持了极低 rDS(on)，提供了一个亚逻辑电平器件。

  • DC-DC商用电源

  • 最大值 rDS(on) = 2.7 mΩ（VGS = 4.5 V, ID = 23 A
    时）
  • 最大值 rDS(on) = 4.7 mΩ（VGS = 2.5 V, ID = 17.5 A
    时）
  • 高性能技术可实现极低的rDS(on)
  • 终端为无铅产品
  • 100%经过UIL测试
  • 符合RoHS标准

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC86012

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CAD Model

Pb

A

H

P

PQFN-8

483AW

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Single

0

30

-

12

1.5

88

54

4.7

2.7

-

16

3625

-

-

-

-

$0.6523

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可靠性数据

Die Related Summary Data

Device: FDMC86012

Equivalent to wafer fab process: RH

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

RH

0

779824089

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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