Low/Medium Voltage MOSFETs | FDMC86102L

100V N 沟道 Shielded Gate PowerTrench® MOSFET

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概览

N沟道MOSFET采用飞兆半导体的先进PowerTrench®工艺制造而成，该工艺集成了屏蔽栅极技术。 该工艺经优化以减小导通电阻，却仍保持卓越的开关性能。

  • This product is general usage and suitable for many different applications.

  • 屏蔽栅极 MOSFET 技术
  • 最大 rDS(on) = 23 mΩ（VGS=10 V、ID=7 A 时）
  • 最大 rDS(on) = 34 mΩ（VGS=4.5 V、ID=5.5 A 时）
  • 薄型 - 最大 1 mm，采用 Power 33封装
  • 符合 RoHS 标准

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC86102L

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CAD Model

Pb

A

H

P

WDFN-8

511DH

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Single

0

100

23

±20

3

18

41

-

34

-

7.3

999

2.3

45

178

7.6

$0.5289

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可靠性数据

Die Related Summary Data

Device: FDMC86102L

Equivalent to wafer fab process: T7

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T7

11

3294609671

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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