N 沟道,PowerTrench® MOSFET,100V,7.5A,103mΩ

Active

概览

此 N 沟道逻辑电平 MOSFET 是使用先进的 PowerTrench® 工艺生产的,特别适用于最大程度降低导通电阻,同时保持卓越的开关性能。增加了 G-S 齐纳以提高 ESD 电压水平。

  • 消费电子

  • 在VGS = 10 V且ID = 3.3 A时,最大RDS(on) = 103 mΩ
  • 在VGS = 4.5 V且ID = 2.7 A时,最大RDS(on) = 153 mΩ
  • HBM ESD保护等级>3 KV典型值
  • 100% 经过 UIL 测试
  • 符合 RoHS 标准

Tools and Resources

Product services, tools and other useful resources related to FDMC86116LZ

产品列表

如需购买产品或样品,请先登录您的安森美账号。

搜寻

Close Search

产品:

1

分享

产品系列:

可订购器件:

1

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC86116LZ

Active

CAD Model

Pb

A

H

P

WDFN-8

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Single

0

100

103

±20

2.2

7.5

19

-

153

-

2

232

0.7

23

45

2.4

$0.3485

More Details

Show More

1-25 of 25

Products per page

Jump to :

contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.