N 沟道,PowerTrench® MOSFET,100V,43A,14mΩ

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概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的,特别适用于最大程度降低导通电阻。此器件非常适用于需要在小空间内实现超低 rDS(on) 的应用,如高性能 VRM、POL 和 Oring 功能。

  • DC-DC商用电源

  • 栅极屏蔽 MOSFET 技术
  • VGS = 10V,ID = 9 A时,最大rDS(on) = 14mΩ
  • 最大 rDS(on) = 23 mΩ(VGS = 6 V、ID = 7 A
  • 通态电阻 rDS(on)
    极低的高性能技术
  • 终端是符合 RoHS 标准的无铅产品

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC86160

Active

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Standard

0

Single

0

100

14

±20

4

43

54

-

-

-

9.8

968

3.5

45

241

11

$0.9237

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