MOSFETs | FDMC86184

N 沟道屏蔽门极 PowerTrench® MOSFET 100 V，53 A，8.5 mΩ

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概览

此 N 沟道 MV MOSFET 是使用先进的 PowerTrench® 工艺生产的，该工艺结合了屏蔽门极技术。此工艺经过了优化，可最大程度降低导通电阻，同时使用业内最佳的软体二极管来保持出色的开关性能。

  • This product is general usage and suitable for many different applications.
  • 屏蔽栅极 MOSFET 技术
  • 最大值 rDS(on) = 8.5 mΩ（VGS = 10 V、ID = 21 A
    ）
  • 最大值 rDS(on) = 24.8 mΩ（VGS = 6 V, ID = 10 A 时
    ）
  • 比其他 MOSFET 供应商的 Qrr 低 50%
  • 降低了开关噪声/EMI
  • MSL1 强健封装设计
  • 100% 经过 UIL 测试
  • 符合 RoHS 标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMC86184

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Active

CAD Model

Pb

A

H

P

PQFN-8

483AW

1

260

REEL

3000

Y

100

8.5

N-Channel

Single

±20

4

57

54

-

-

-

14

1490

$0.9164

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