MOSFETs | FDMC86240

N 沟道，Power Trench® MOSFET，150V，16A，51mΩ

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概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench®工艺生产的，该工艺结合了屏蔽门极技术。此工艺经过了优化，可最大程度降低导通电阻，同时可保持卓越的开关性能。

  • This product is general usage and suitable for many different applications.
  • 屏蔽栅极 MOSFET 技术
  • 最大 rDS(on) = 51 mΩ（VGS=10 V、ID=4.6 A 时）
  • 最大 rDS(on) = 70 mΩ（VGS=6 V、ID=3.9 A 时）
  • 薄型 - 最大 1 mm，采用 Power 33封装
  • 100% 经过 UIL 测试
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMC86240

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Active

CAD Model

Pb

A

H

P

WDFN-8

511DH

1

260

REEL

3000

Y

150

51

N-Channel

Single

±20

4

16

40

-

-

-

6

680

$0.9272

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