FDMC86244: N 沟道,Power Trench® MOSFET,150V,9.4A,134mΩ

Datasheet: MOSFET – N-Channel, Shielded Gate, POWERTRENCH® 150 V, 9.4 A, 134 mΩ
Rev. 3 (490kB)
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产品更改通知
此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的,特别适用于最大程度降低导通电阻,同时保持卓越的开关性能。
特性
 
  • VGS = 10 V,ID = 2.8 A时,rDS(on)
    = 134 mΩ(最大值)
  • VGS = 6 V,ID = 2.4 A时,rDS(on)
    = 186 mΩ(最大值)
  • 薄型 - 最大1 mm,采用Power 33封装
  • 100%经过UIL测试
  • 符合RoHS标准
应用
  • This product is general usage and suitable for many different applications.
评估/开发工具信息
产品 状况 Compliance 简短说明 行动
STR-60-100V-BLDC-MDK-GEVB Active
Pb-free
1kW, 60-100V Motor Development Board
STR-60-100V-BLDC-MDK-GEVK Active
Pb-free
1kW, 60-100V Motor Development Board
Availability & Samples
Specifications
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
FDMC86244 Active
Pb-free
Halide free
FDMC86244 WDFN-8 511DR 1 260 Tape and Reel 3000 $0.4221
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDMC86244  
 $0.4221 
Pb
H
 Active   
N-Channel
Single
150
±20
4
9.4
26
-
-
134
-
2.4
257
WDFN-8
外形
511DR   
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