N 沟道,Power Trench® MOSFET,150V,9.4A,134mΩ

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此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的,特别适用于最大程度降低导通电阻,同时保持卓越的开关性能。

  • This product is general usage and suitable for many different applications.
  • VGS = 10 V,ID = 2.8 A时,rDS(on)
    = 134 mΩ(最大值)
  • VGS = 6 V,ID = 2.4 A时,rDS(on)
    = 186 mΩ(最大值)
  • 薄型 - 最大1 mm,采用Power 33封装
  • 100%经过UIL测试
  • 符合RoHS标准

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMC86244

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Active

CAD Model

Pb

A

H

P

WDFN-8

1

260

REEL

3000

Y

150

134

N-Channel

Single

±20

4

9.4

26

-

-

-

2.4

257

$0.4221

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