Low/Medium Voltage MOSFETs | FDMC86260ET150

150 V N 沟道 Power Trench® MOSFET

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概览

这一 N 沟道 MOSFET 器件采用飞兆的高级 PowerTrench® 工艺生产，该工艺专为最大限度地降低通态电阻并保持卓越的开关性能而量身定制。

  • DC-DC商用电源

  • 扩展额定 TJ 至 175°C
  • 最大值 rDS(on) = 34 mΩ（VGS = 10 V, ID = 5.4 A
    时）
  • 最大值 rDS(on) = 44 mΩ（在 VGS = 6 V, ID = 4.8 A
    时）
  • 通态电阻 rDS(on)
    极低的高性能技术
  • 100% 经过 UIL 测试
  • 终端为无铅产品
  • 符合 RoHS 标准
    "

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC86260ET150

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Active

CAD Model

Pb

A

H

P

PQFN-8

483AW

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Standard

0

Single

0

150

34

±20

4

25

65

-

-

-

9.7

1000

3.1

85

105

4.8

$0.8685

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可靠性数据

Die Related Summary Data

Device: FDMC86260ET150

Equivalent to wafer fab process: RH

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

RH

0

779824089

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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