Low/Medium Voltage MOSFETs | FDMC86261P

P 沟道，Power Trench® MOSFET，-150V，-9A，160mΩ

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概览

此 P 沟道 MOSFET 是使用先进的 PowerTrench® 技术生产的。这种极高密度工艺特别适用于最大程度降低导通电阻，并针对卓越的开关性能进行了优化。

  • Industrial
  • Portable and Wireless

  • 最大 rDS(on) = 160 mΩ（VGS = -10 V、ID = -2.4 A 时）
  • 最大 rDS(on) = 185 mΩ（VGS = -6 V、ID = -2.2 A 时）
  • 中压 P 沟道硅技术的 RDS-on 极低，非常适用于 Qg 较低的情况
  • 本品十分适用于需要快速开关和负载开关的场合
  • 100% 经过 UIL 测试
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC86261P

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CAD Model

Pb

A

H

P

WDFN-8

511DH

1

260

REEL

3000

Y

P-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Standard

0

Single

0

-150

160

±25

-4

-9

40

-

-

-

11

1021

3.7

197

87

4.7

$0.6831

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可靠性数据

Die Related Summary Data

Device: FDMC86261P

Equivalent to wafer fab process: T7

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产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T7

11

3294609671

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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