MOSFETs | FDMC8651

N 沟道 Power Trench® MOSFET 30V，20A，6.1mΩ

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CAD Model

CAD模型

概览

此器件专为提高 DC/DC 转换器的效率而设计。使用 MOSFET结构中的新技术，对门极电荷和电容的各种组件进行了优化，以减少开关损耗。低门极电阻和极低的 Miller 电荷可使自适应和固定死区时间门极驱动电路具有出色的性能。维持极低的 rDS(on)，以提供子逻辑电平器件。

  • This product is general usage and suitable for many different applications.
  • VGS = 4.5 V，ID = 15 A时，最大rDS(on)
    = 6.1 mΩ
  • VGS = 2.5 V，ID = 12 A时，最大rDS(on) = 9.3mΩ
  • 薄型 - 最大1 mm，采用Power 33封装
  • 100%经过UIL测试
  • 符合RoHS标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMC8651

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Active

CAD Model

Pb

A

H

P

PQFN-8

483AK

1

260

REEL

3000

Y

30

-

N-Channel

Single

12

1.5

20

41

9.3

6.1

-

19.4

2530

$0.5097

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