方案
By Technology
N 沟道 MOSFET 采用飞兆半导体的先进 PowerTrench®工艺制造而成,该工艺集成了栅极屏蔽技术。 该工艺经优化以减小导通电阻,却仍保持卓越的开关性能。
搜寻
Close Search
产品:
1
分享
排序方式
产品系列:
┗
可订购器件:
1
产品
状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
Vgs (V)
Vgs(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
FDMC86570LET60
Active
Pb
A
H
P
PQFN-8
1
260
REEL
3000
Y
N-Channel
PowerTrench® T6
Power 33 (u8FL)
Low-Medium Voltage
Logic
0
Single
0
60
4.3
±20
3
87
65
-
6.5
-
29
4790
6.3
26
821
19
$1.1275
More Details
Show More
1-25 of 25
Products per page
Jump to :
Find and compare products, get support and connect with onsemi sales team.
Contact Sales
分享
导出
Rows
Printer Friendly Version
PDF Format
Excel Format
CSV Format
To proceed order you need to accept Terms
可靠性数据
Die Related Summary Data
Device: FDMC86570LET60
Equivalent to wafer fab process: RM
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
RM
0
1284986536
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)