FDMC86570LET60

N 沟道 Shielded Gate PowerTrench® MOSFET

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CAD模型

概览

N 沟道 MOSFET 采用飞兆半导体的先进 PowerTrench®工艺制造而成，该工艺集成了栅极屏蔽技术。该工艺经优化以减小导通电阻，却仍保持卓越的开关性能。

应用

DC-DC商用电源

特性

屏蔽栅极 MOSFET 技术
最大值 r_DS(on)= 4.3 mΩ（V_GS = 10 V、I_D= 18 A
）
最大值 r_DS(on)= 6.5 mΩ（V_GS = 4.5 V、I_D = 15 A
）
高性能技术可实现极低的 rDS(on)
终端为无铅产品
符合 RoHS 标准
"

物质成分

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDMC86570LET60

Active

PQFN-8

483AW

260

REEL

3000

4.3

N-Channel

Single

±20

6.5

4790

$1.1275

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MOSFETs | FDMC86570LET60

N 沟道 Shielded Gate PowerTrench® MOSFET

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