Low/Medium Voltage MOSFETs | FDMC89521L

双 N 沟道，Power Trench® MOSFET，60V，8.2A，17mΩ

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概览

此器件在一个双 Power 33 (3 mm X 3 mm MLP) 封装中包括了两个 60V N 沟道 MOSFET。该封装针对卓越热性能进行了改善。

  • 消费电子

  • 最大值 rDS(on) = 17 mΩ（VGS = 10 V、ID = 8.2 A 时）
  • VGS = 4.5 V，ID = 6.7 A时，最大rDS(on) = 27mΩ
  • 终端为无铅产品
  • 符合 RoHS 标准

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC89521L

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CAD Model

Pb

A

H

P

WDFN-8

511DG

1

260

REEL

3000

Y

N-Channel

PowerTrench® T6

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Single

0

60

17

±20

3

8.2

16

-

27

-

7.9

1228

1.9

11

243

10

$0.7685

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可靠性数据

Die Related Summary Data

Device: FDMC89521L

Equivalent to wafer fab process: T9

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T9

0

1733101746

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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