双 N 沟道,逻辑电平,PowerTrench® MOSFET,40V,12A,8.2mΩ

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双 N 沟道,逻辑电平,PowerTrench® MOSFET,40V,12A,8.2mΩ

  • This product is general usage and suitable for many different applications.
  • 典型 RDS(on) = 6.3 mΩ(VGS = 10 V、ID = 12 A
  • 典型 Qg(tot) = 15 nC(VGS = 10 V、ID = 12 A
  • UIS 能力
  • 符合RoHS标准
  • 符合 AEC Q101 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMC9430L-F085

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Active

CAD Model

Pb

A

H

P

WDFN-8

1

260

REEL

3000

Y

40

Q1=Q2=8

N-Channel

Dual

±20

3

12

11.4

-

Q1=Q2=11.5

-

15

984

$0.8853

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