FDMC9430L

双 N 沟道，逻辑电平，PowerTrench® MOSFET，40V，12A，8.2mΩ

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CAD模型

概览

双 N 沟道，逻辑电平，PowerTrench® MOSFET，40V，12A，8.2mΩ

应用

This product is general usage and suitable for many different applications.

特性

典型 R_DS(on) = 6.3 mΩ（V_GS = 10 V、I_D = 12 A
）
典型 Q_g(tot) = 15 nC（V_GS = 10 V、I_D = 12 A
）
UIS 能力
符合RoHS标准
符合 AEC Q101 标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDMC9430L-F085

Active

WDFN-8

511DG

260

REEL

3000

Q1=Q2=8

N-Channel

Dual

±20

11.4

Q1=Q2=11.5

984

$0.8853

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MOSFETs | FDMC9430L_F085

双 N 沟道，逻辑电平，PowerTrench® MOSFET，40V，12A，8.2mΩ

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