FDMD8240LET40

双 N 沟道，PowerTrench® MOSFET，40V，103A，2.6mΩ

相似产品推荐

产品

向销售发送邮件

添加至我的收藏

数据表

CAD模型

概览

此器件在一个双 Power (3.3 mm X 5 mm) 封装中包括了两个 40V N 沟道 MOSFET。针对半桥/全桥内部连接的 HS 源和 LS 漏极，低源电感封装，低 rDS(on) / Qg FOM 硅。

应用

This product is general usage and suitable for many different applications.

特性

TJ 额定值扩展至 175°C
最大 r_DS(on) = 2.6 mΩ（V_GS = 10 V、I_D = 23 A
）
最大 r_DS(on) = 3.95 mΩ（V_GS = 4.5 V、I_D = 19 A
）
是实现桥式拓扑初级侧灵活布局的理想选择
100% 经过 UIL 测试
开尔文高侧 MOSFET 驱动引脚排列能力
终端无引线且符合 RoHS 标准

物质成分

产品更改通知

产品列表

如需购买产品或样品，请先登录您的安森美账号。

搜寻

产品:

排序方式

Product Groups:

┗

Orderable Parts:

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDMD8240LET40

Lifetime

PQFN-12

483BN

260

REEL

3000

Q1=Q2=2.6

N-Channel

Dual

±20

103

Q1=Q2=3.95

3020

$1.0133

产品型号:

分销代理商		Stock	BUY

名字*

Please provide a first name.

姓氏*

Please provide a last name.

公司*

Please provide a company/university name.

Please provide a valid email.

企业邮箱*

国家/地区*

Please choose a country.

职位*

Please choose a job title.

电话

我们销售团队有什么能帮到您的设计吗?

Please provide a how could we help you.

我同意我所提供的信息可按照安森美隐私政策和使用条款被使用。

You have to agree with the privacy policy.

Hello, your current browser settings are preventing us from processing your submission. You can adjust your browser settings and reload the page or you can submit an email directly to inside.sales@onsemi.com

You might also try the following:

Clear your browser cookies
Try to open this page in anonymous browser window
Try a different browser
Make sure you have reliable internet connection

MOSFETs | FDMD8240LET40

双 N 沟道，PowerTrench® MOSFET，40V，103A，2.6mΩ

概览

产品列表

向销售发送邮件