MOSFETs | FDME1023PZT

双 P 沟道，Power Trench® MOSFET，-20V，-2.6A，142mΩ

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概览

此器件专门设计为手机和其他超便携应用中电池充电开关的单封装解决方案。它具有两个独立的 P 沟道 MOSFET，且均具有低导通电阻，可实现最低的导电损耗。在典型的共源配置中连接时，可以实现双向电流流动。MicroFET 1.6x1.6 薄封装对于其物理尺寸来说提供了卓越的热性能，非常适合开关和线性模式应用。

  • This product is general usage and suitable for many different applications.
  • VGS = -4.5 V，ID = -2.3 A时，最大rDS(on) = 142 mO
  • VGS = -2.5 V，ID = -1.8 A时，最大rDS(on)
    = 213mO
  • VGS = -1.8 V，ID = -1.5 A时，最大rDS(on)
    = 331mO
  • VGS = -1.5 V，ID = -1.2 A时，最大rDS(on)
    = 530mO
  • 薄型： 0.55 mm最大值，新的MicroFET 1.6x1.6薄型封装
  • 不含有卤化合物和氧化锑
  • HBM静电放电保护等级为>1600V（注3）
  • 符合 RoHS 标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDME1023PZT

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Active

CAD Model

Pb

A

H

P

UDFN-6

517DW

1

260

REEL

5000

Y

-20

-

P-Channel

Dual

8

-1

-2.6

1.4

Q1=Q2=213

Q1=Q2=142

-

5.5

305

$0.2939

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