MOSFETs | FDME910PZT

P 沟道，PowerTrench® MOSFET，-20V，-8A，24mΩ

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CAD Model

CAD模型

概览

此器件专门针对手机和其他超便携应用中的电池充电或负载开关而设计。它具有一个带有低导通电阻的 MOSFET，且可针对 ESD 提供齐纳二极管保护。MicroFET 1.6x1.6 薄封装对于其物理尺寸来说提供了卓越的热性能，非常适合开关和线性模式应用。

  • 手机
  • 便携设备
  • VGS = -4.5 V，ID = -8 A时，最大r
    DS(on) = 24mΩ
  • VGS = -2.5 V，ID = -7 A时，最大rDS(on) = 31mΩ
  • VGS = -1.8 V，ID = -6 A时，最大rDS(on) = 45mΩ
  • 薄型： 0.55 mm最大值，新的MicroFET 1.6x1.6薄型封装
  • HBM静电放电保护等级> 2kV典型值（注3）
  • 不含有卤化合物和氧化锑
  • 符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDME910PZT

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Obsolete

CAD Model

Pb

A

H

P

UDFN-6

517DV

1

260

REEL

5000

N

-20

-

P-Channel

Single

8

-1.5

-8

2.1

31

24

3

15

1586

Price N/A

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