MOSFETs | FDMQ8203

双 N 沟道和双 P 沟道，PowerTrench® MOSFET，GreenBridge™ 系列高效桥式整流器

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CAD Model

概览

与二极管桥相比，此四 mosfet 解决方案在功率耗散方面提供了十倍改善。

  • 中央办公室
  • Q1/Q4: N 沟道
  • PD解决方案大幅提升效益
  • VGS = 6 V，ID = 2.4 A时，最大rDS(on) = 175mΩ
    Q2/Q3: P沟道
  • 符合 RoHS 标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

FDMQ8203

Active

CAD Model

Pb

A

H

P

WDFN-12

511CS

1

260

REEL

3000

Y

Complementary

Dual

±100

±20

Q1,Q4:4.0, Q2,Q3: -3.0

N: 6.0, P: -6.0

Q1: 22, Q2:37

-

-

N: 110, P: 190

-

6.4

Q1/Q4= 158, Q2/Q3: 639

$0.5996

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