Low/Medium Voltage MOSFETs | FDMQ8403

N 沟道，PowerTrench® MOSFET，GreenBridge™ 系列高效桥式整流器，100V，6A，110mΩ

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概览

与二极管桥相比，此四 MOSFET 解决方案在功率耗散方面提供了十倍改善。

  • 中央办公室

  • ￭ VGS = 110 V，ID = 3 A时，最大rDS(on)
    = 10 mΩ
  • VGS = 6 V，ID = 2.4 A时，最大rDS(on) = 175mΩ
  • PD解决方案大幅提升效益
  • 符合RoHS标准

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMQ8403

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CAD Model

Pb

A

H

P

WDFN-12

511CR

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

WDFN-12

Low-Medium Voltage

Standard

0

Bridge

0

100

110

±20

4

6

17

-

-

-

1.7

162

0.8

23

43

2.6

$1.4145

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可靠性数据

Die Related Summary Data

Device: FDMQ8403

Equivalent to wafer fab process: T7

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T7

11

3294609671

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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