N 沟道,PowerTrench® MOSFET,GreenBridge™ 系列高效桥式整流器,60V,8A,17.5mΩ

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概览

与二极管桥相比,此四 MOSFET 解决方案在功率耗散方面提供了十倍改善。

  • 中央办公室
  • Max rDS(on) = 17.5 mΩ at VGS = 10 V, ID = 8 A
  • Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A
  • Max rDS(on) = 25 mΩ at VGS = 4.5 V, ID = 6.5 A
  • Substantial efficiency benefit in PD solutions
  • RoHS Compliant

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMQ86530L

Active

CAD Model

Pb

A

H

P

WDFN-12

1

260

REEL

3000

Y

N-Channel

PowerTrench® T6

WDFN-12

Low-Medium Voltage

Logic

0

Bridge

0

100

17.5

±20

3

8

22

-

25

-

11

1725

2.3

12

299

10

$1.3243

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