MOSFETs | FDMS004N08C

N 沟道，屏蔽门极，PowerTrench® MOSFET，80V，126A，4.0mΩ

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概览

此 N 沟道 MV MOSFET 是使用先进的 PowerTrench®工艺生产的，该工艺结合了屏蔽门极技术。此工艺经过了优化，可最大程度降低导通电阻，同时可保持卓越的开关性能，以及业内最佳的软体二极管。

  • This product is general usage and suitable for many different applications.
  • 屏蔽栅极 MOSFET 技术
  • 最大值 rDS(on) = 4.0 mΩ（VGS = 10 V、ID = 44 A
    ）
  • 最大值 rDS(on) = 10.4 mΩ（VGS = 6 V, ID = 22 A 时
    ）
  • 比其他 MOSFET 供应商的 Qrr 低 50%
  • 降低了开关噪声/EMI
  • MSL1 强健封装设计
  • 100% 经过 UIL 测试
  • 符合 RoHS 标准

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMS004N08C

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Active

CAD Model

Pb

A

H

P

PQFN-8

483AE

1

260

REEL

3000

Y

80

4

N-Channel

Single

±20

4

126

125

-

-

-

25

3035

$1.2097

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