功率 MOSFET 80V,单 N 沟道,84A,6.7mΩ,采用 Power 56 封装。

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概览

此 N 沟道 MV MOSFET 使用安森美半导体先进的 PowerTrench® 工艺生产,该工艺结合了屏蔽门极技术。此工艺经过了优化,可最大程度降低导通电阻,同时可保持卓越的开关性能,以及业内最佳的软体二极管。

  • This product is general usage and suitable for many different applications.

  • AC-DC Synchronous Rectification
  • DC-DC primary and secondary mosfet
  • Motor control switch

  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 6.7 mΩ at VGS = 10 V, ID = 21 A
  • Max rDS(on) = 9.9 mΩ at VGS = 4.5 V, ID = 17 A
  • 50% Lower Qrr than Other MOSFET Suppliers
  • Lowers Switching Noise/EMI
  • MSL1 Robust Package Design
  • 100% UIL Tested
  • RoHS Compliant
  • Logic Level drive Capable

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS007N08LC

Active

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

N-Channel

PowerTrench® T8

Power 56 (SO-8FL)

Low-Medium Voltage

Logic

0

Single

0

80

6.7

20

2.5

84

2.5

-

9.9

16

33

2227

4

24

520

27

$0.8617

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