Low/Medium Voltage MOSFETs | FDMS3500

75V N沟道PowerTrench® MOSFET

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概览

此N沟道MOSFET采用飞兆半导体先进的Power Trench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。

  • This product is general usage and suitable for many different applications.

  • VGS = 10V，ID = 11.5A时，最大RDS(on) = 14.5 mΩ
  • VGS = 4.5V，ID = 10A时，最大RDS(on) = 16.3 mΩ
  • 先进的封装和硅技术完美融合，实现了低rDS(on)
  • MSL1耐用封装设计
  • 100%经过UIL测试
  • 符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS3500

Contact Sales

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CAD Model

Pb

A

H

P

PQFN-8

483AE

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Logic

0

Single

0

75

14.5

±20

3

49

96

-

16.3

27

34

3580

11.6

45

225

120

$0.8118

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可靠性数据

Die Related Summary Data

Device: FDMS3500

Equivalent to wafer fab process: T2

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T2

0

1290840276

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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