75V N沟道PowerTrench® MOSFET

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概览

此N沟道MOSFET采用飞兆半导体先进的Power Trench®工艺生产,这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。

  • This product is general usage and suitable for many different applications.
  • VGS = 10V,ID = 11.5A时,最大RDS(on) = 14.5 mΩ
  • VGS = 4.5V,ID = 10A时,最大RDS(on) = 16.3 mΩ
  • 先进的封装和硅技术完美融合,实现了低rDS(on)
  • MSL1耐用封装设计
  • 100%经过UIL测试
  • 符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMS3500

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Active

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

75

14.5

N-Channel

Single

±20

3

49

96

-

16.3

27

34

3580

$0.8118

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