FDMS3500

75V N沟道PowerTrench® MOSFET

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CAD模型

概览

此N沟道MOSFET采用飞兆半导体先进的Power Trench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。

应用

This product is general usage and suitable for many different applications.

特性

V_GS = 10V，I_D = 11.5A时，最大R_DS(on) = 14.5 mΩ
V_GS = 4.5V，I_D = 10A时，最大R_DS(on) = 16.3 mΩ
先进的封装和硅技术完美融合，实现了低r_DS(on)
MSL1耐用封装设计
100%经过UIL测试
符合RoHS标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDMS3500

Active

PQFN-8

483AE

260

REEL

3000

14.5

N-Channel

Single

±20

16.3

3580

$0.8118

产品型号:

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MOSFETs | FDMS3500

75V N沟道PowerTrench® MOSFET

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