Low/Medium Voltage MOSFETs | FDMS3572

N 沟道，UltraFET Trench® MOSFET，80V，22A，16.5mΩ

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概览

UItraFET 器件结合了各种特性，可在电源转换应用中提供标杆式能效。此类器件针对 rDS(on)、低 ESR、低总电荷和 Miller 门极电荷而优化，适用于高频 DC/DC 转换器。

  • This product is general usage and suitable for many different applications.

  • 最大rDS(on) = 16.5mΩ （VGS = 10V, ID = 8.8A）
  • 最大rDS(on) = 24mΩ（VGS = 6V, ID = 8.4A）
  • VGS = 10V时，Qg = 28nC（典型值）
  • 低米勒电荷
  • 优化高频率时的效率
  • 符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS3572

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CAD Model

Pb

A

H

P

DFN-8

506DP

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Standard

0

Single

0

100

16.5

±20

4

22

78

-

-

27

28

1870

8

71

275

78

$1.0263

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可靠性数据

Die Related Summary Data

Device: FDMS3572

Equivalent to wafer fab process: 2C

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

2C

0

3698398665

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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