MOSFETs | FDMS3672

N 沟道，UltraFET® Trench MOSFET，100V，22A，23mΩ

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概览

UItraFET 器件结合了各种特性，可在电源转换应用中提供标杆式能效。此类器件针对 Rds(on)、低 ESR、低总电荷和 Miller 门极电荷而优化，适用于高频 DC/DC 转换器。

  • This product is general usage and suitable for many different applications.
  • VVGS = 10V，ID = 7.4A时，最大RDS(on) = 23 mΩ
  • VGS = 6V，ID = 6.6A时，最大RDS(on) = 29 mΩ
  • VGS = 10V时，Qg= 31nC（典型值）
  • 低米勒电荷
  • 优化高频率时的效率
  • 符合RoHS标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMS3672

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Active

CAD Model

Pb

A

H

P

DFN-8

506DP

1

260

REEL

3000

Y

100

23

N-Channel

Single

±20

4

22

78

-

-

18

31

2015

$1.1388

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