N 沟道,UltraFET® Trench MOSFET,100V,22A,23mΩ

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概览

UItraFET 器件结合了各种特性,可在电源转换应用中提供标杆式能效。此类器件针对 Rds(on)、低 ESR、低总电荷和 Miller 门极电荷而优化,适用于高频 DC/DC 转换器。

  • This product is general usage and suitable for many different applications.

  • VVGS = 10V,ID = 7.4A时,最大RDS(on) = 23 mΩ
  • VGS = 6V,ID = 6.6A时,最大RDS(on) = 29 mΩ
  • VGS = 10V时,Qg= 31nC(典型值)
  • 低米勒电荷
  • 优化高频率时的效率
  • 符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Active

CAD Model

Pb

A

H

P

DFN-8

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Standard

0

Single

0

100

23

±20

4

22

78

-

-

18

31

2015

8

101

210

90

$1.1388

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