Low/Medium Voltage MOSFETs | FDMS4435BZ

P 沟道 PowerTrench® MOSFET -30V，-18A，20mΩ

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概览

此 P 沟道 MOSFET 是使用先进的 Power Trench® 工艺生产的，特别适用于最大程度降低导通电阻。此器件适用于笔记本电脑和便携式电池组中常见的电源管理和负载开关应用。

  • 笔记本电脑

  • 在VGS = -10 V且ID = -9.0 A时，最大值rDS(on) = 20 mΩ
  • 在VGS = -4.5 V且ID = -6.5 A时，最大值rDS(on) = 37 mΩ
  • 为电池应用提供了扩展的VGSS电压范围(-25 V)
  • 高性能沟道技术可实现极低的RDS(on)
  • 高功率和高电流处理能力
  • HBM ESD保护级别>7 KV典型值（注4）
  • 100%经过UIL测试
  • 终端是符合RoHS标准的无铅产品

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS4435BZ

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CAD Model

Pb

A

H

P

PQFN-8

483AE

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

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0

Single

0

-25

20

25

-3

-18

39

-

37

-

18

1540

-

-

-

-

$0.2429

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可靠性数据

Die Related Summary Data

Device: FDMS4435BZ

Equivalent to wafer fab process: TV

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TV

0

1399545734

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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