N 沟道,屏蔽门极,PowerTrench® MOSFET,120V,118A,4.0mΩ

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此 N 沟道 MV MOSFET 是使用先进的 PowerTrench®工艺生产的,该工艺结合了屏蔽门极技术。此工艺经过了优化,可最大程度降低导通电阻,同时可保持卓越的开关性能,以及业内最佳的软体二极管。

  • This product is general usage and suitable for many different applications.
  • AC-DC and DC-DC Power Supplies
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 67 A
  • Max rDS(on) = 8.0 mΩ at VGS = 6 V, ID = 33 A
  • 50% Lower Qrr than Other MOSFET Suppliers
  • Lowers Switching Noise/EMI
  • MSL1 Robust Package Design
  • 100% UIL Tested
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

FDMS4D0N12C

Active

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

N-Channel

Single

120

20

4

118

2.7

-

-

4

-

58

4565

$2.141

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