方案
设计
此 N 沟道 MV MOSFET 是使用先进的 PowerTrench®工艺生产的,该工艺结合了屏蔽门极技术。此工艺经过了优化,可最大程度降低导通电阻,同时可保持卓越的开关性能,以及业内最佳的软体二极管。
应用
终端产品
特性
搜寻
Close Search
产品:
1
Share
排序方式
Product Groups:
┗
Orderable Parts:
1
产品
状况
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Pricing ($/Unit)
FDMS4D0N12C
Active
Pb
A
H
P
PQFN-8
1
260
REEL
3000
Y
N-Channel
Single
120
20
4
118
2.7
-
-
4
-
58
4565
$2.141
More Details
Show More
1-25 of 25
Products per page
Jump to :
Share
Export
Rows
Printer Friendly Version
PDF Format
Excel Format
CSV Format
Hello, your current browser settings are preventing us from processing your submission. You can adjust your browser settings and reload the page or you can submit an email directly to inside.sales@onsemi.com
You might also try the following: