MOSFETs | FDMS4D0N12C

N 沟道，屏蔽门极，PowerTrench® MOSFET，120V，118A，4.0mΩ

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概览

此 N 沟道 MV MOSFET 是使用先进的 PowerTrench®工艺生产的，该工艺结合了屏蔽门极技术。此工艺经过了优化，可最大程度降低导通电阻，同时可保持卓越的开关性能，以及业内最佳的软体二极管。

  • This product is general usage and suitable for many different applications.
  • AC-DC and DC-DC Power Supplies
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 67 A
  • Max rDS(on) = 8.0 mΩ at VGS = 6 V, ID = 33 A
  • 50% Lower Qrr than Other MOSFET Suppliers
  • Lowers Switching Noise/EMI
  • MSL1 Robust Package Design
  • 100% UIL Tested
  • RoHS Compliant

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMS4D0N12C

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Active

CAD Model

Pb

A

H

P

PQFN-8

483AF

1

260

REEL

3000

Y

120

4

N-Channel

Single

20

4

118

2.7

-

-

-

58

4565

$2.141

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