FDMS4D0N12C: N 沟道,屏蔽门极,PowerTrench® MOSFET,120V,118A,4.0mΩ

Datasheet: Power MOSFET, Single N-Channel, 120 V, 4.0 mOhm, 118 A
Rev. 4 (251kB)
产品概览
浏览可靠性数据
查看材料成分
产品更改通知
此 N 沟道 MV MOSFET 是使用先进的 PowerTrench®工艺生产的,该工艺结合了屏蔽门极技术。此工艺经过了优化,可最大程度降低导通电阻,同时可保持卓越的开关性能,以及业内最佳的软体二极管。
特性
 
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 67 A
  • Max rDS(on) = 8.0 mΩ at VGS = 6 V, ID = 33 A
  • 50% Lower Qrr than Other MOSFET Suppliers
  • Lowers Switching Noise/EMI
  • MSL1 Robust Package Design
  • 100% UIL Tested
  • RoHS Compliant
应用   终端产品
  • This product is general usage and suitable for many different applications.
 
  • AC-DC and DC-DC Power Supplies
Availability & Samples
Specifications
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
FDMS4D0N12C Active
Pb-free
Halide free
FDMS4D0N12C PQFN-8 483AF 1 260 Tape and Reel 3000 $2.141
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDMS4D0N12C  
 $2.141 
Pb
H
 Active   
N-Channel
Single
120
+-20V
4
118
2.7
4
58
4565
PQFN-8
外形
483AF   
之前浏览的产品
清除列表

Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.