Low/Medium Voltage MOSFETs | FDMS4D0N12C

N 沟道，屏蔽门极，PowerTrench® MOSFET，120V，118A，4.0mΩ

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此 N 沟道 MV MOSFET 是使用先进的 PowerTrench®工艺生产的，该工艺结合了屏蔽门极技术。此工艺经过了优化，可最大程度降低导通电阻，同时可保持卓越的开关性能，以及业内最佳的软体二极管。

  • This product is general usage and suitable for many different applications.

  • AC-DC and DC-DC Power Supplies

  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 67 A
  • Max rDS(on) = 8.0 mΩ at VGS = 6 V, ID = 33 A
  • 50% Lower Qrr than Other MOSFET Suppliers
  • Lowers Switching Noise/EMI
  • MSL1 Robust Package Design
  • 100% UIL Tested
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS4D0N12C

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CAD Model

Pb

A

H

P

PQFN-8

483AF

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Standard

0

Single

0

120

4

20

4

118

2.7

-

-

-

58

4565

9

175

2045

17

$1.84

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可靠性数据

Die Related Summary Data

Device: FDMS4D0N12C

Equivalent to wafer fab process: HVFET

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

HVFET

21

40576236131

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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