MOSFETs | FDMS5352

N 沟道，Power Trench® MOSFET，60V，49A，6.7mΩ

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CAD Model

CAD模型

概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的，特别适用于最大程度降低导通电阻，同时保持卓越的开关性能。

  • This product is general usage and suitable for many different applications.
  • VGS = 10V，ID = 13.6A时，Max rDS(on) = 6.7mΩ
  • VGS = 4.5V，ID = 12.3A时，最大rDS(on) = 8.2mΩ
  • 先进的封装和硅技术完美融合，实现了低rDS(on)
  • MSL1耐用封装设计
  • 100%经过UIL测试
  • 符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMS5352

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Active

CAD Model

Pb

A

H

P

PQFN-8

483AE

1

260

REEL

3000

Y

60

6.7

N-Channel

Single

±20

3

49

104

-

8.2

-

48

5220

$1.2012

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