Low/Medium Voltage MOSFETs | FDMS6673BZ

P 沟道 PowerTrench® MOSFET -30V，-82A，6.8mΩ

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概览

FDMS6673BZ 适用于最大程度降低负载开关应用中的损耗。同时结合了硅和封装技术的发展进步，可提供最低的 RDS(on) 以及 ESD 防护。

  • This product is general usage and suitable for many different applications.

  • VGS = -10 V，ID = -15.2 A时，最大rDS(on) = 6.8 mΩ
  • VGS = -4.5 V，ID = -11.2 A时，最大rDS(on) = 12.5 mΩ
  • 先进的封装和硅技术完美融合，实现了低rDS(on)
  • HBM ESD保护等级 = 8 kV典型值 （注3）
  • MSL1耐用封装设计
  • 符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS6673BZ

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CAD Model

Pb

A

H

P

PQFN-8

483AE

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Logic

0

Single

0

-30

6.8

25

-3

-82

73

-

12.5

43

52

4444

-

-

-

-

$0.4908

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可靠性数据

Die Related Summary Data

Device: FDMS6673BZ

Equivalent to wafer fab process: TV

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TV

0

1399545734

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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