FDMS6681Z

P 沟道，PowerTrench® MOSFET，-30V，-122A，3.2mΩ

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CAD模型

概览

FDMS6681Z 适用于最大程度降低负载开关应用中的损耗。同时结合了硅和封装技术的发展，可提供最低的 rDS(on) 以及 ESD 防护。

应用

This product is general usage and suitable for many different applications.

终端产品

Industrial, Consumer, and High End Computing

特性

V_GS = -10 V，I_D = -21.1 A时，最大r_DS(on) = 3.2 mΩ
V_GS = -4.5 V，I_D = -15.7 A时，最大r_DS(on) = 5.0 mΩ
先进的封装和硅技术完美融合，实现了低r_DS(on)和高效率
HBM静电放电保护等级为8 kV，典型值（注3）
MSL1耐用封装设计
符合RoHS标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDMS6681Z

Last Shipments

PQFN-8

483AE

260

REEL

3000

-30

3.2

P-Channel

Single

-3

-122

7803

Price N/A

产品型号:

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MOSFETs | FDMS6681Z

P 沟道，PowerTrench® MOSFET，-30V，-122A，3.2mΩ

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