P 沟道,PowerTrench® MOSFET,-30V,-122A,3.2mΩ

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概览

FDMS6681Z 适用于最大程度降低负载开关应用中的损耗。同时结合了硅和封装技术的发展,可提供最低的 rDS(on) 以及 ESD 防护。

  • This product is general usage and suitable for many different applications.
  • Industrial, Consumer, and High End Computing
  • VGS = -10 V,ID = -21.1 A时,最大rDS(on) = 3.2 mΩ
  • VGS = -4.5 V,ID = -15.7 A时,最大rDS(on) = 5.0 mΩ
  • 先进的封装和硅技术完美融合,实现了低rDS(on)和高效率
  • HBM静电放电保护等级为8 kV,典型值(注3)
  • MSL1耐用封装设计
  • 符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMS6681Z

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Last Shipments

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

N

-30

3.2

P-Channel

Single

25

-3

-122

73

-

5

39

97

7803

Price N/A

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