双 N 沟道,PowerTrench® MOSFET,30V

Active

概览

此器件在一个双 MLP 封装中包括了两个特制的 N 沟道 MOSFET。开关节点已经内部连接,可实现同步降压转换器的轻松布置和布线。控制 MOSFET (Q1) 和同步 SyncFET™ (Q2) 可提供最佳功率效率。

  • 笔记本电脑

  • Q1: N沟道
  • VGS = 10 V且ID = 12 A时,最大rDS(on) = 10.0 m
  • VGS = 4.5 V且ID = 10 A时,最大rDS(on) = 13.6 m
    Q1: N沟道

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS7608S

Active

CAD Model

Pb

A

H

P

DFN-8

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Logic

0

Dual

0

20

Q1: 10, Q2: 6.3

20

3

Q1: 22.0, Q2: 30.0

Q1: 2.2; Q2: 2.5

-

Q1: 13.6, Q2: 7.2

63

12

1380

-

-

-

-

$0.4704

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