MOSFETs | FDMS7620S

双 N 沟道，PowerTrench® MOSFET，30V

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CAD Model

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概览

此器件在一个独特的双 Power 56 封装内包括了两个专用 MOSFET。它提供了能效和 PCB 利用率方面优化的同步降压功率级。该低开关损耗“高压侧”MOSFET 由低导通损耗“低压侧”SyncFET 提供互补。

  • 笔记本电脑
  • Q1： N沟道
  • VGS = 2 V且ID = 10.1 A时，最大rDS(on) = 20.0 mΩ
  • VGS = 4.5 V且ID = 7.5 A时，最大rDS(on) = 30.0 mΩ Q2： N沟道
  • VGS = 2 V且ID = 12.4 A时，最大rDS(on) = 11.2 mΩ
  • VGS = 4.5 V且ID = 10.9 A时，最大rDS(on) = 14.2 mΩ

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMS7620S

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Active

CAD Model

Pb

A

H

P

DFN-8

506DR

1

260

REEL

3000

Y

20

Q1: 20, Q2: 11.2

N-Channel

Dual

20

3

Q1: 13.0, Q2: 22.0

Q1: 2.2; Q2: 2.5

-

Q1: 30, Q2: 14.2

62

7.9

1050

$0.4921

More Details

FDMS7620S-F106

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Last Shipments

CAD Model

Pb

A

H

P

DFN-8

506DR

1

260

REEL

3000

N

20

Q1: 20, Q2: 11.2

N-Channel

Dual

20

3

Q1: 13.0, Q2: 22.0

Q1: 2.2; Q2: 2.5

-

Q1: 30, Q2: 14.2

62

7.9

1050

Price N/A

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