N 沟道,PowerTrench® MOSFET,30V,267A,0.99mΩ

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概览

此 N 沟道 MOSFET 专为提高 DC/DC 转换器的总效率以及最大程度降低其开关节点噪声而设计,可以使用同步开关 PWM 控制器,也可以使用传统开关 PWM 控制器。它经过了优化,可实现低门极电荷和极低 RDS(ON)。

  • This product is general usage and suitable for many different applications.

  • 最大rDS(on) = 1.1 mO(VGS = 10 V, ID = 36 A
  • 最大rDS(on) = 1.6 mO(VGS = 4.5 V, ID = 32 A
  • 先进的封装技术和硅技术相结合,实现了低rDS(on)和高效率
  • MSL1耐用封装设计
  • 100%经过UIL测试
  • 符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Active

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Logic

0

Single

0

30

0.99

20

3

267

104

-

1.55

43

63

11250

-

-

-

-

$0.9789

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