Low/Medium Voltage MOSFETs | FDMS7650

N 沟道，PowerTrench® MOSFET，30V，267A，0.99mΩ

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概览

此 N 沟道 MOSFET 专为提高 DC/DC 转换器的总效率以及最大程度降低其开关节点噪声而设计，可以使用同步开关 PWM 控制器，也可以使用传统开关 PWM 控制器。它经过了优化，可实现低门极电荷和极低 RDS(ON)。

  • This product is general usage and suitable for many different applications.

  • 最大rDS(on) = 1.1 mO（VGS = 10 V, ID = 36 A
    ）
  • 最大rDS(on) = 1.6 mO（VGS = 4.5 V, ID = 32 A
    ）
  • 先进的封装技术和硅技术相结合，实现了低rDS(on)和高效率
  • MSL1耐用封装设计
  • 100%经过UIL测试
  • 符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS7650

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Active

CAD Model

Pb

A

H

P

PQFN-8

483AE

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Logic

0

Single

0

30

0.99

20

3

267

104

-

1.55

43

63

11250

-

-

-

-

$0.9789

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可靠性数据

Die Related Summary Data

Device: FDMS7650

Equivalent to wafer fab process: RM

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

RM

0

1284986536

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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